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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUL742C
DESCRIPTION *Collector-Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) *Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 0.8A
APPLICATIONS *Designed for electronic lamp ballast circuits switch-mode power supplies applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCES VCEW VCEO VEBO IC ICM IB
B
PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous Collector Current-peak Base Current-Continuous Base Current-peak Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range
w w
scs .i w
900 500 400 11 5 7.5 2.5 4 50 150 -65~150
VALUE
UNIT V V
.cn mi e
V V A A A A W
IBM PC Ti Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICES hFE-1 hFE-2 hFE-3 hFE-4 COB VCEW fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 500mA; L= 125mH, Imeasure= 100mA IE= 1mA; IC= 0 IC= 0.8A; IB= 0.2A IC= 2.5A; IB= 0.8A IC= 0.8A; IB= 0.2A IC= 2.5A; IB= 0.8A VCES= 900V; VEB=0 VCES= 900V; VEB=0,TC= 150 MIN 400 11
BUL742C
TYP.
MAX
UNIT V V
0.2 0.4 1.0 1.2 10 200
V V V V A
Output Capacitance
w
ww
scs .i
IC= 10mA; VCE= 2V IC= 0.8A; VCE= 2V
IC= 2.5A; VCE= 2V IC= 5A; VCE= 2V
.cn mi e
15 15 7 4 500 4
IE= 0; VCB= 10V; f= 1MHz VS= 50V; L= 1mH; IC= 2.5A; IB1= -IB2= 0.5A; VBE(off)= -5V IC= 0.2A; VCE= 10V; f= 1MHz
60
pF V MHz
Collector-Emitter Working Voltage Current-Gain--Bandwidth Product
isc Websitewww.iscsemi.cn


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